Lab 4

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ENEE 35

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7 – Electronics Lab 4
Field Effect Transistors

During this lab you will experiment with n-channel and p-channel Field Effect Transistors (FETs),
and for this purpose you will be using an MC14007UB CMOS array.

Figure 1: MC14007UB pin assignment Figure

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: MC14007UB schematic

Voltage-Current Characteristics

Figure 3: Circuit for measuring MOSFET’s output characteristic

� Connect the circuit shown in Fig. 3.

� With VDD at 10V and VG at 0 V initially, raise VGG until a small drain current (a few
microamps) flows. Measure the threshold voltage VGG.

� Raise VGG to 2 V. Measure ID while lowering VDD in steps of 1 V.

� Repeat the above step with VG set at 3V, 4V, and 5 V.

� Draw a graph of ID vs. VDS with VGS as a parameter.

� Having measured several VGS, VDS, and ID values, find the parameter k
′
n(W/L)

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Multisim Simulation

� Select an NMOS transistor of your choice in Multisim. Use a similar circuit as in Figure
2, and follow a similar procedure in Multisim as you did in the lab to find the MOSFET
characteristics (the threshold voltage, and the k

′
n(W/L) value).

� Simulate a common source amplifier using very large coupling and bypassing capacitors. Use
an input voltage of your choice (make sure it is not very large) and measure (in the simulation)
the gain of the amplifier. Also, calculate the gain using the information you found in part M1
by analyzing the small signal circuit (you also need to find gm, thus the Q point).

Note: As always, please remember that the lab report needs to include all necessary
parts/components, as discussed in the syllabus. The above description only provides
the basic guidelines that you need to follow.

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